TeamTech

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Project TeamTech

A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase

Project is carried out from 1st October 2018 to 29 December 2021

Programme Description

Project is carried out within the TeamTech programme of the Foundation for Polish Science. Programme TEAM-TECH is co-funded in the framework of Program Operacyjny Inteligentny Rozwój (PO IR) oraz Foundation for Polish Science. Programme TEAM-TECH offers grants for research teams headed by leading scientists carrying out R&D projects related to a new product or production process (technological or manufacturing) of significant importance for the economy.

Project Goal

The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The equilibrium crystal shape can be overpowered by a proper thermal field design and that the crystal will follow the thermal field and grow in a direction perpendicular to the isotherms.

International Collaboration

Project is carried out in collaboration with:

Department of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC, USA

Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, (Amano Laboratory), Japan

Publications

Project results have been published in:

  1. K. Sierakowski, R. Jakiela, B. Lucznik, P. Kwiatkowski, M. Iwinska, M. Turek, H. Sakurai, T. Kachi and M. Bockowski, High Pressure Processing of Ion Implanted GaN, Electronics (aug 2020)
  2. K. Grabianska, P. Jaroszynski, A. Sidor, M. Bockowski, M. Iwinska, GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices, Electronics (aug 2020)
  3. Rafal Jakiela, Kacper Sierakowski, Tomasz Sochacki, Małgorzata Iwinska, Michal Fijalkowski, Adam Barcz, Michal Bockowski "Investigation of diffusion mechanism of beryllium in GaN" Physica B: Condensed Matter (oct 2020)
  4. K. Grabianska, R. Kucharski, A. Puchalski, T. Sochacki, M. Bockowski "Recent progress in basic ammonothermal GaN crystal growth" Journal of Crystal Growth (oct 2020)
  5. R. Kucharski, T. Sochacki, B. Lucznik, M. Bockowski "Growth of bulk GaN crystals" Journal of Applied Physics (aug 2020)
  6. Ferdinand Scholz, Michal Bockowski, Ewa Grzanka "GaN-Based Materials" (aug 2020)
  7. R. Piotrzkowski, M. Zajac, E. Litwin-Staszewska, M. Bockowski "Self-compensation of carbon in HVPE-GaN:C" Appl. Phys. Lett. (jul 2020)
  8. M. Amilusik, D. Wlodarczyk, A. Suchocki, M. Bockowski "Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds" Jpn. J. Appl. Phys. (may 2019)
  9. Malgorzata Iwinska, Marcin Zajac, Boleslaw Lucznik, Michal Fijalkowski, Mikolaj Amilusik, Tomasz Sochacki, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory, Michal Bockowski "Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds" Jpn. J. Appl. Phys. (may 2019)
  10. M. Amilusik, T. Sochacki, M. Fijalkowski, B. Lucznik, M. Iwinska, A. Sidor, H. Teisseyre, J. Domagała, I. Grzegory, M. Bockowski "Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds" Jpn. J. Appl. Phys. (may 2019)
  11. Tomasz Sochacki, Sakari Sintonen, Jan Weyher, Mikolaj Amilusik, Aneta Sidor, Michal Bockowski "Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed" Jpn. J. Appl. Phys. (may 2019)

Master theses

There were two Master degree students with scholarships for 10 months in the project. The students defended their Master theses with excellent notes at the Faculty of Physics of the Warsaw University of Technology. The subjects of their theses were correlated to the main subject of the project. The students were examining doping processes for n-type and semi-insulating (SI) GaN crystals. The supervisor of both theses was the PI of this project prof. M. Bockowski. The titles of the theses were as follows:
 
  1. Influence of growth temperature and pressure on donor dopants in gallium nitride (GaN) crystallized from gas phase by HVPE method
  2. Examination of physical properties of bulk, semi-insulating gallium nitride (GaN) crystal grown by HVPE method

Lectures

Project results have been presented by:

  1. M. Iwinska, Technology of Gallium Nitride Crystal Growth - Challenges and Perspectives October 4-9, 2020 PRiME 2020 online meeting - invited lecture
  2. M. Boćkowski, Recent progress in bulk GaN growth February 1st-6th SPIE, Photonics West 2020, San Francisco, USA - contributed
  3. M. Bockowski, Gallium Nitride Crystal Growth Technology, Institute of Global Innovation Research Seminar, 06.12.2019 Tokyo University of Agriculture and Technology - invited lecture
  4. M. Bockowski, High quality GaN substrates for electronic and optoelectronic applications, JST-ACCEL Symposium, 22.11.2019, Tokyo University - invited lecture
  5. M. Bockowski, GaN-on-GaN technology ďż˝ challenges and perespectives, Institute of Global Innovation Research Symposium, 19.11.2019 Tokyo University of Agriculture and Technology - invited lecture
  6. M. Bockowski, Bulk growth of GaN. How to overcome the equilibrium crystal shape? APWS2019, 10th-15th November, Okinawa, Japan, - invited lecture
  7. M. Bockowski, GaN-on-GaN technology; challenges and perspectives. CIRFE, IMaSS, Nagoya University, 07th October 2019 Japan - invited lecture
  8. T. Sochacki, Crystallization of GaN by HVPE method with controlled lateral growth, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA – invited lecture
  9. T. Sochacki, HVPE-GaN Doped with Carbon and/or Manganese, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA - contributed
  10. T. Sochacki, Thick GaN crystals of high purity grown with an increased rate by ammonobasic method, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA, - contributed
  11. M. Amilusik, Point defects in GaN:Mg crystals grown by ammonothermal method ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA, - contributed
  12. M. Amilusik, Detailed study of HVPE-GaN doped with silicon, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA - contributed
  13. M. Amilusik, Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy, ICCGE-19 28th July-2nd August 2019, Keystone, Colorado, USA- poster
  14. M. Zajac, Thick GaN crystals of high purity grown with an increased rate by ammonobasic method, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA - contributed
  15. M. Zajac, P-type conductivity of GaN:Zn monocrystals obtained by ammonothermal method, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  16. M. Zajac, ICNS-13, Point defects in GaN:Mg crystals grown by ammonothermal method, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  17. M. Iwinska, Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  18. M. Iwinska, HVPE-GaN Doped with Carbon and/or Manganese, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA – contributed
  19. B. Lucznik, Detailed study of HVPE-GaN doped with silicon, ICNS -13, 7th-12th July, 2019 Bellevue, Washington, USA – poster
  20. B. Lucznik, Crystallization of GaN by HVPE method with controlled lateral growth, ICNS-13, 7th-12th July, 2019 Bellevue, Washington, USA –contributed
  21. M. Bockowski, Bulk growth of GaN. How to overcome the equilibrium crystal shape?, MGCTF2019, 1-5 July 2019, St. Petersburg, Russia – invited lecture
  22. T. Sochacki, GaN Substrates of the Highest Structural Quality, CIRFE, IMaSS, Nagoya University, 27th May 2019 Japan - invited lecture
  23. T. Sochacki, GaN Substrates of the Highest Structural Quality, CSW2019, 19th-23rd May 2019 Nara, Japan - invited lecture
  24. M. Bockowski, Bulk Growth of GaN-status, perespectives and trends; GPCCG3, 17th-21st March 2019 Poznan, Poland - invited lecture
  25. M. Iwinska, Semi-insulating HVPE-GaN grown on native seeds, SPIE, Photonics West 2019, 3rd-7th February, San Francisco, USA - contributed
  26. M. Iwińska, Influence of different dopants on the properties of bulk GaN, 4th IDGNS, 18th-20th November, Sendai, Japan –invited lecture
  27. M. Amilusik, Micro-Raman Studies of Strain in Bulk GaN Crystals Grown by Hydride Vapor Phase Epitaxy on Ammonothermal GaN Seeds, IWN2018, 11th-16th November, Kanazawa, Japan –poster
  28. M. Amilusik, Growth of GaN:Mg by Hydride Vapor Phase Epitaxy, IWN2018, 11th-16th November, Kanazawa, Japan –contributed
  29. M. Amilusik, Homoepitaxial Growth by Hydride Vapor Phase Epitaxy of Semi-Polar GaN on Ammonothermal Seeds, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  30. B. Lucznik, Gradient of silicon concentration in HVPE-GaN, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  31. M. Iwińska, Highly resistive HVPE-GaN grown on native seeds - investigation and comparison of different dopants, , IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  32. T. Sochacki Crystallization of GaN by HVPE method with controlled lateral growth, IWN2018, 11th-16th November, Kanazawa, Japan - contributed
  33. M. Bockowski, Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN, IWN2018, 11th-16th November, Kanazawa, Japan –invited lecture
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